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2-Mbit density FRAM

Developer of non-volatile FRAM (ferroelectric random access memory) Ramtron has extended its family of high-density FRAM devices with the FM21L16.

This memory device is a 2-Mbit, 3V, parallel, non-volatile FRAM in a 44-pin TSOP-II package that features fast access, Ramtron’s NoDelay writecycle, virtually unlimited read/write cycles, and low power consumption. Pincompatible with asynchronous SRAM (static RAM), the memory targets SRAM sockets in a variety of application spaces. The company says it is a cost-effective alternative to MRAM (magnetic RAM), BBSRAM (battery-backed SRAM), and nonvolatile SRAM: as well as featuring low cost and a small footprint, FRAM consumes much less active and standby power than MRAM and does not require a battery or an on-board capacitor to back up data. Organised in 128kbits x 16 with an industry- standard parallel interface, the FM21L16 reads and writes at bus speed with an endurance of at least 100 trillion writes and more than 10 years of data retention. The device has an access time of 60 nsec and a cycle time of 110 nsec, and includes an advanced write-protection scheme to prevent inadvertent writes and data corruption.

It has a high-speed page mode for a peak bandwidth of 80 Mbytes/sec, uses 18 mA for reads/writes, and features an ultra-low-power sleep mode of 5 µA. It operates from 2.7 to 3.6V over -40 to +85 °C and costs $12 (10,000).

Ramtron, www.ramtron.com