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30V N-channel power MOSFETs with integrated Schottky diodes

ON Semiconductor has broadened its portfolio of N-channel power MOSFET devices with the introduction of new 30V products with integrated Schottky diodes. The NTMFS4897NF, NTMFS4898NF and NTMFS4899NF have maximum RDS(on) values of 2, 3 and 5mΩ, respectively at 10V, optimised for synchronous side in buck converter applications to achieve high power efficiency. Typical gate charge specifications of 39.6, 25.6 and 12.2nC, respectively (at Vgs of 4.5V) ensure that switching losses are also kept to a minimum. The integrated Schottky improves efficiency and waveforms by reducing dead time conduction losses facilitated by the integration into the same die as the primary FET structure. Typical applications for the new power MOSFETs include DC/DC conversion, point-of-load conversion and low side switching tasks for servers, telecomm network infrastructure, PCs, notebook computers and games consoles. The devices are all offered in compact SO8FL, 5x6mm, RoHS-compliant package with low thermal resistance.