Investigating Die attach Failure in IGBTs using Power Cycling Tests

January 19, 2015 // By Mentor Graphics
A whitepaper presenting thermal transient measurement techniques combined with power cycling for evaluating degradation in die attach material in power semiconductors, specifically IGBTs. It features test  results for IGBTs tested over 1000's operational cycles to point of failure beside structural insight from thermal simulatio . Analysis is presented on identification of degradation development before actual failure to illustrate how these methods can be used to determine lifetime of devices for die attach failure and other modes.
Mentor Graphics, IGBT testing, power testing