Power Semiconductor Failure Diagnosis using Thermal Characterization and Power Cycling

January 19, 2015 // By Mentor Graphics
A description of combined use of power cycling with failure analysis via  transient thermal measurement methods to identify onset of material degradation in devices such as IGBTs & MOSFETs. Understanding failure and its development over a lifetime of potential cycles is a must for those companies tasked with delivering reliable performance in demanding applications such as automotive, rail, renewable energy and motion control sectors for power semiconductors.  Learn more in the whitepaper.
Mentor Graphics, IGBT testing, power testing