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Development board featuring enhancement-mode gallium nitride FETs

Efficient Power Conversion) has introduced the EPC9006 development board for DC/DC power supplies, PoL converters, class D audio amplifiers, hard-switched and high frequency circuits. The development board is a 100V maximum device voltage, 5A maximum output current, half bridge with onboard gate drives, featuring the EPC2007 eGaN (enhancement-mode gallium nitride) FET. The purpose of this development board is to simplify the evaluation process of the eGaN FET by including all the critical components on a single board that can be connected into any existing converter, claims the company. The development board is 2x1.5inches and is claimed to contain not only two GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains layout for optimal switching performance. There are also many probe points to facilitate simple waveform measurement and efficiency calculation, says the company.