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Fast-Recovery MOSFETs

Reduced on-resistance for high power density and ultra-low losses

A family of fast-recovery MOSFETs from ST Micro combines enhanced switching performance with on-resistance improved by more than 18% over existing devices. The first device in the Super-Junction FDmesh II family is the STW55NM60ND, a 600V N-channel MOSFET with on-resistance of 0.060 Ω for fast-recovery MOSFETs in the standard TO-247 package. The peak drain current of 51A allows one MOSFET to replace multiple components in converters for space-constrained applications such as telecom and server systems. ST has improved its FDmesh super-junction architecture by combining a vertical structure with the conventional strip MOSFET, which also features a faster and more rugged intrinsic body diode. In addition to reducing on-resistance and recovery time, further improvements increase switching efficiency and save driving losses by reducing gate capacitance, gate charge and gate input resistance. The devices also have high dv/dt rating for higher reliability during switching, particularly in bridge-type topologies including Zero Voltage Switching (ZVS) under light-load conditions. To be introduced are the STP30NM60ND, rated to 25A drain current and achieving 0.13 Ω on-resistance in the TO-220 package, and the STD11NM60ND for applications up to 10A with 0.45 Ω on-resistance. The STW55NM60ND costs $10 (1000).
ST Microelectronics, www.st.com/pmos

Pic; stw55…..jpg