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Ferroelectric RAMs operate at a voltage between 3 and 3.6V

Fujitsu Semiconductor Europe is sampling the SPI (serial peripheral interface) FRAMs (ferroelectric RAMs) based on the 0.18µm technology for its customers. With this step, the company approaches the end of the migration process from 0.35 to 0.18µm technology to achieve good FRAM performance with E2PROM compatible package. FRAM combines the advantages of swift writing SRAM with non-volatile Flash into one device.

The MB85RSxxx FRAM family incorporates three devices namely MB85RS256A, MB85RS128A and MB85RS64A that have density levels of 256, 128 and 64kbit, respectively. They operate at a voltage range between 3.0 and 3.6V and provide an endurance of 10 billion write and read cycles as well as data retention of 10 years at 55°C. The company claims that the operating frequency of the FRAMs has also been significantly increased to a maximum of 25MHz. The FRAMs are suitable for low power applications and are offered in 8pin plastic small outline packages. Besides the SPI FRAM family, the company offers FRAM standalone devices with I²C as well as parallel interfaces. The density levels of the FRAM vary from 16kbit to 4Mbit. The standalone memory devices are used in metering, factory automation applications as well as various industrial segments, where data logging, high speed write access and high endurance is essential.