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HIGH-RELIABILITY HEMTs GOOD FOR 100 YEARS AT 200°C

Fujitsu Laboratories reports that it has developed a technology to create high-power GaN (gallium-nitride) HEMTs (high-electron-mobility transistors) that can operate for more than 1 million hours at 200C under a pinch-off condition with a drain voltage of 50V. A proprietary N-type GaN surface layer enables the high level of reliability by improving crystal quality and minimizing surface traps, according to the company. Devices based on the technology should find use in wireless-communication-infrastructure products, such as cellular and WiMax base stations.

Fujitsu, jp.fujitsu.com/labs/en.