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Logic level gate drive trench MOSFETs

International Rectifier’s new range of logic level gate drive trench HEXFET power MOSFETs feature improved on-state resistance (RDS(on)) and high package current rating for high power DC motors and power tools, industrial batteries and power supply applications. Utilising IR’s latest trench technology, the new family of MOSFETs offers a low RDS(on) at 4.5V Vgs to improve thermal efficiency. The devices’ higher current rating provides more guard band from unwanted transients and reduces part count in parallel-type topologies where several MOSFETs share high current. The TO-220, D2PAK and TO-262 packages have a package current rating of up to 195A. The new logic level gate drive trench MOSFETs can be driven from a microcontroller or weak battery to deliver improved efficiency at light load conditions, making them suitable for high current DC/DC switching and DC motor drive applications. The MOSFETs provides a voltage range of 40V to 100V. Qualified to industrial grade and moisture sensitivity level 1 (MSL1) the devices are available in all standard power packages including TO-220, D2PAK, TO-262, as well as a 7-lead D2PAK. The devices are offered lead free and are RoHS compliant.