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Miniature MOSFETs
EDN Europe, 01 Sep 2008Toshiba Electronics Europe (TEE) has launched miniature small signal MOSFETs that have a driving voltage of 1.2V with low on resistance. The devices within the new SSMx35 MOSFET series operate with a gate drive voltage (VGS) of 1.2V and are suitable for high-speed and analogue switching in portable, battery-powered equipment. The series offers a range of single or dual N-channel and P-channel options as well as a dual version that integrates N-channel and P-channel devices in the same package. The
N-channel devices are rated for maximum DC current of 180mA, while the P-channel MOSFETs are rated to -100mA. Maximum Ron ratings (with a 1.2V drive voltage) are 20Ω and 44Ω respectively. The single (1-in-1) N-channel (SSM3K35xx) and P-channel (SSM3J35xx) MOSFETs are available in CST3 (1.0mm x 0.6mm x 0.38mm), VESM (1.2mm x 1.2mm x 0.5mm) and SSM (1.6mm x 1.6mm x 0.7mm) packaging. Dual transistor versions (2-in-1) can be supplied as dual N-channel (SSM6Nxx), dual P-channel (SSM6Pxx) and N- plus P-channel combination devices (SSM6L35xx) in SOT-563 and SOT-363 package variants.
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