The A30 High Performance Analog Low Noise CMOS process provides superior noise performance and is realized as an optical shrink by a factor of 0.9 from ams’ advanced 0.35 µm High-Voltage CMOS process family.
The A30 technology features performance-optimized, isolated 3.3V devices (NMOSI and PMOSI), isolated 3.3V low Vt devices (NMOSIL and PMOSIL), an isolated high voltage device with thin gate oxide (NMOSI20T), vertical bipolar transistors (VERTN1 and VERTPH) as well as an isolated 3.3V super-low noise transistor (NMOSISLN), which offers flicker noise on the level of 0.46 pA/ √Hz (@ 1kHz, Ids = 1 µA @Vds = 3V, 10 x 1.2 µm²). It enables flicker noise reduction by at least a factor of 4 to 10 for high drain currents compared to ams’ H35 process. Passive devices such as various capacitors (poly, sandwich and MOS varactor) and resistors (diffusion, well-based, poly, high resistive poly and precision) complete the device offering.
The A30 process is suited for ultra-low noise sensing applications and analogue read-out ICs which require noise-optimized input stages or high signal-to-noise ratios. It allows the development, ams adds, of innovative solutions for consumer electronics, automotive, medical and IoT devices. The A30 process is fully qualified and manufactured in ams’ 200mm fabrication facility. All 0.30 µm elements are drawn and verified as 0.35 µm devices. The optical shrink (factor of 0.9) is done in the mask shop on the completed GDSII data and results in smaller die sizes respectively more dies per wafer.
The A30 process is supported by the hitkit, ams’ process design kit. Based on Virtuoso Custom IC technology 6.1.6 from Cadence, the hitkit helps design teams to reduce time-to-market for highly competitive products in the analogue-intensive mixed-signal arena. Offering accurate simulation models, extraction and verification run sets for both Calibre and Assura and flexible SKILL-based PCells, the hitkit provides a comprehensive design environment. The new hitkit v4.15 for A30 process is now