100-V N-channel power MOSFETs offer industry-low on-resistance in 1.6-mm by 1.6-mm and 2-mm by 2-mm footprint areas

January 07, 2013 // By Paul Buckley
Vishay Intertechnology, Inc has released two 100 V n-channel TrenchFET power MOSFETs that extend Vishay’s ThunderFET technology to smaller package sizes.

The SiB456DK and SiA416DJ are claimed to be the industry’s first 100 V n-channel devices in the compact, thermally enhanced PowerPAK SC-75 1.6 mm by 1.6 mm and PowerPAK SC-70 2 mm by 2 mm footprint areas to offer on-resistance of less than 200 mΩ and 100 mΩ, respectively.

The MOSFETs are optimized for boost converters, low-power DC/AC inverters, and primary side switching in miniature DC/DC converters for telecom bricks, point-of-load applications, and LED lighting in portable equipment. For designers, the devices’ ultra-compact PowerPAK SC-75 and PowerPAK SC-70 packages save PCB space in these applications, while their low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency. In addition, the MOSFETs’ on-resistance rating down to 4.5 V simplifies gate drives.

In applications where on-resistance is more critical than size, the 2 mm by 2 mm SiA416DJ offers a maximum on-resistance of 83 mΩ at 10 V and 130 mΩ at 4.5 V, and a low on-resistance times gate charge − a key figure of merit (FOM) for MOSFETs in DC/DC converter applications − of 540 mΩ-nC at 10 V and 455 mΩ-nC at 4.5 V. For applications where size is more critical, the 1.6 mm by 1.6 mm SiB456DK features maximum on-resistance of 185 mΩ at 10 V and 310 mΩ at 4.5 V, and an FOM of 611 mΩ-nC at 10 V and 558 mΩ-nC at 4.5 V.

The SiB456DK and SiA416DJ are 100% Rg and UIS tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.


Samples and production quantities of the new MOSFETs are available now, with lead times of 12 to 14 weeks for large orders.

Visit Vishay Intertechnology at www.vishay.com