The Si Cap technology of integrated passive devices in silicon developed by IPDiA offers unique performances from 16 kHz to 60 GHz, with an ultra low insertion loss of 0.5 dB, a flat frequency response and an excellent return loss.
Stability over temperature is +/-0.5% from -55 to 150°C. The devices feature ultra-deep trenches in silicon developed using a semiconductor process which enables the integration of trench MOS capacitors providing high capacitance value of 100nF in a 100µm low profile 0402 SMT.
Thanks to the orientation of pads underneath the component, the impedance discontinuity of transmission line can be mitigated. The UBSC series are compliant with standard JEDEC assembly rules, making the product fully compatible with high speed automated pick-and-place manufacturing operations. Case sizes of 0201 and 0603 are also available. The capacitors are also RoHS-compliant and are available with ENiG terminations.
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