This GaN on Si HEMT D-Mode transistor is suited for defence communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.
The MAGX-100027-100C0P supports CW, pulsed, and linear operation with output power levels up to 100W (50 dBm). For 50V operation, this device offers CW operation of 18.3 dB gain at 2.45 GHz, and 70% drain efficiency. For pulsed operation, the MAGX-100027-100C0P offers 18.4 dB gain at 2.7 GHz and 71% drain efficiency. This 100% RF tested transistor is available in an industry standard plastic package with bolt down flange.
Delivering performance that rivals expensive GaN on silicon carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology, 4th generation GaN (Gen4 GaN) is positioned to break the final technical and commercial barriers to mainstream GaN adoption, according to MACOM. Gen4 GaN delivers greater than 70% peak efficiency and 19 dB gain for modulated signals at 2.7 GHz, which is similar to GaN on SiC technologies, and more than 10 percentage points greater efficiency than LDMOS. It also delivers power density that is more than four times that of LDMOS.
“This Gen4 GaN transistor provides optimal performance for customers,” said Gary Lopes, Product Manager, MACOM. “The MAGX-100027-100C0P is an ideal candidate for customers looking to support rugged applications and experience the solid reliability that is offered by MACOM GaN solutions. GaN on Si … [has] demonstrated clear, field-proven reliability in harsh environmental conditions for more than five years.”