1200-V IGBTs rated at 25, 50 and 70A extend Microsemi's high power industrila device offering

March 15, 2013 // By Paul Buckley
Microsemi Corporation has unveiled more than a dozen new devices in the company’s new generation of 1200 volt (V) non-punch through (NPT) IGBTs which include 25 A, 50 A and 70 A current ratings.

Microsemi’s NPT IGBT product family is designed for a wide range of industrial applications requiring high power and high performance, with the newest devices well-suited for arc welders, solar inverters, and uninterruptible and switch mode power supplies. All of the devices in this 1200 V product family are based on Microsemi's advanced Power MOS 8 technology, which enables a significant reduction of at least 20 percent in total switching and conduction losses as compared to competitive solutions.

Consistent with all devices in the product family, Microsemi's new NPT IGBT solutions can be packaged with Microsemi's FREDs or silicon carbide Schottky diodes to provide engineers with a highly integrated solution that allows them to streamline product development efforts.

Additional features include a lower gate charge than similar devices, allowing faster switching.  The hard switching operation is greater than 80 kHz to enable efficient power conversion.  Easy to parallel (positive temperature coefficient of Vcesat) capabilities improve reliability in high power applications.

In addition to the benefits of the device, Microsemi offers NPT IGBTs in a large surface mount backside solderable D3 package, allowing designers to achieve increased power density and lower manufacturing costs.


Microsemi's 1200 V NPT IGBT product family now consists of over 20 devices with current ratings of 25 A, 40 A, 50 A, 70 A and 85 A. The IGBT products are available in D3, TO-247, T-MAX, TO-264 and SOT-227 packages.

The new devices are in production now.

Visit Microsemi at www.microsemi.com