1200V Generation-8 IGBT family steps up efficiency and ruggedness

November 12, 2014 // By Graham Prophet
International Rectifier's new generation Insulated Gate Bipolar Transistor (IGBT) technology platform, Generation 8 (Gen8) 1200V IGBTs, uses trench gate field stop technology delivered in industry standard TO-247 packages for industrial and energy saving applications.

Gen8 devices are available with current ratings from 8A up to 60A with typical VCE(ON) of 1.7V and a short-circuit rating of 10 µsec for increased power density and superior robustness.

This technology offers softer turn-off characteristics for motor drive applications, minimising dV/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.

Part Number

Package

BV

(V)

I(nom) (A)

VCE(ON)

(V)

Tsc

(µs)

IRG8P08N120KD

TO247

1200

8

1.7

10

IRG8P15N120KD

TO247

1200

15

1.7

10

IRG8P25N120KD

TO247

1200

25

1.7

10

IRG8P40N120KD

TO247

1200

40

1.7

10

IRG8P50N120KD

TO247

1200

50

1.7

10

IRG8P60N120KD

TO247

1200

60

1.7

10

International Rectifier; www.irf.com