1200V IGBTs employ 3rd generation Ultra Field Stop technology

May 10, 2016 // By Graham Prophet
ON Semiconductor has introduced a new series of insulated gate bipolar transistors (IGBTs) which use its Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are 1200V devices with minimal total switching loss (Ets) characteristics; the remarkable improvement in performance is attributable in part to a very wide highly activated field-stop layer & optimised co-pack diode.

Then ultra-field-stop designation refers to the cross-sectional structure of the device; a thinner epitaxial layer is employed (thinner being better for most parameters) but this requires that electric fields be controlled; hence filed-stop.

 

The NGTB40N120FL3WG has an E ts of 2.7 millijoules (mJ), while the NGTB25N120FL3WG has an E ts of 1.7 mJ. Both devices have a V CEsat of 1.7V at their respective rated currents. The NGTB40N120L3WG is optimized for low conduction losses and has a VCEsat of 1.55V, at rated current, with an Ets of 3 mJ. The new Ultra field stop products are co-packaged with a fast recovery diode that has soft turn-off characteristics and still offers minimal reverse recovery losses. The NGTB25N120FL3WG and NGTB40N120FL3WG are suitable for use in Uninterruptible Power Supplies (UPS) and solar inverters, whereas the NGTB40N120L3WG is mainly targeted at use in motor drives.

 

NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are all supplied in RoHS-compliant TO–247 packages and respectively priced at $2.02, $1.76, and $2.12 (10,000).

 

ON Semiconductor; www.onsemi.com