The S series has the lowest saturation voltage (VCE(sat)) among comparable 1200V IGBTs. The positive VCE(sat) temperature coefficient, with tight distribution of parameters, simplifies paralleling of multiple devices for higher power requirements. Very low voltage overshoot and zero oscillation at turn-off allows simpler external circuitry and fewer components.
With 10 µs minimum short-circuit withstand time (at 150°C starting junction temperature), latch-up free operation, extended maximum operating junction temperature of 175°C, and wide Safe Operating Area (SOA), the new devices are extremely rugged and reliable.
For use in the frequency range up to 8 kHz, in hard-switching topologies, the S series featuring the third-generation trench-gate field-stop technology complements ST’s M-series and H-series 1200V IGBTs, which are designed for optimum efficiency at up to 20 kHz and over 20 kHz respectively. Together, these a choice of advanced, high-efficiency devices for IGBT circuits operating at commonly used switching frequencies.
The S-series IGBTs in this release offer 15A, 25A and 40A current ratings in standard or long-lead TO-247 packages. All feature the latest-generation co-packaged freewheeling diode, which combines fast recovery and a high level of softness for very low EMI and turn-on losses. Prices start from $2.80 for the 15A STGW15S120DF3 in standard TO-247 package for orders of 1000 pieces.
ST Microelectronics; www.st.com/igbt