With highly optimised conduction and turn-off characteristics, as well as low turn-on losses, these improved IGBTs are suitable for use in hard-switching circuits operating at up to 20 kHz. Increased maximum operating temperature of 175°C, a wide safe operating area (SOA) with latch-up free operation, and short-circuit withstand time of 10 µsec at 150°C ensure rugged performance in harsh ambient and electrical environments.
The third generation of technology at the heart of these new devices includes a new advanced design for the trench gate structure and an optimised high-voltage IGBT architecture. This minimises voltage overshoot and eliminates oscillation during switch-off, thereby reducing energy losses and simplifying circuit design. At the same time, low saturation voltage (Vce(sat)) ensures high conduction efficiency. The positive temperature coefficient and tight parameter distribution of Vce(sat) simplify paralleling of devices for increased power-handling capability.
The new devices also have enhanced efficiency at turn-on: the latest-generation diode technology co-packaged in anti-parallel with the IGBT provides fast recovery time and enhanced softness without significantly increasing turn-on losses, resulting in outstanding EMI performance.
The 40A STGW40M120DF3, 25A STGW25M120DF3, and 15A STGW15M120DF3 in standard TO-247 package, and the STGWA40M120DF3, STGWA25M120DF3 and STGWA15M120DF3 in TO-247 long-lead package, are priced from $2.80 (1000) for the STGW15M120DF3.