The diode claims the best leakage current performance in its class, leaking far less current at temperatures up to 175C. The key benefits of this 1200V SiC diode include its extremely fast switching and no reverse recovery current, which dramatically reduces switching losses compared to silicon and results in superior energy efficiency. The diode’s ability to switch stably over a wide temperature range is another factor contributing to its performance, as is its zero recovery voltage which eliminates voltage overshoots.
The FFSH40120ADN diode also offers considerably greater ruggedness and reliability compared to equivalent silicon-based diodes due to SiC having superior thermal performance to silicon. The breakdown field of SiC is 10x higher than that of silicon and SiC also has 3x greater thermal conductivity.