The revolutionary product line takes advantage of more than a decade of experience in SiC technology development as well as high quality, high volume production.
The new CoolSiC 1200V SiC JFETs have lower switching losses compared to IGBTs, which allow higher switching frequencies to be used without sacrificing overall system efficiency. This enables the use of much smaller passive components, which result in smaller overall solution size, lower weight and reduced system cost. Alternatively, a higher output power solution can be realized within the same inverter housing.
In order to ensure that the normally-on JFET technology is safe and easy to use, Infineon has developed a concept which is called Direct Drive Technology. In this concept, the JFET is combined with an external Low Voltage MOSFET and a dedicated Driver IC which ensures safe system start-up conditions as well as fast and controlled switching.
The CoolSiC JFET features a monolithically integrated body diode that has a switching performance comparable to an external SiC Schottky barrier diode. The combination offers the utmost in efficiency, reliability, safety and ease of use.
Availability and Pricing
Samples of the CoolSiC JFET products as well as the Driver ICs are available in the second quarter of 2012. First OEM ramp-ups are expected in the first half of 2013. Pricing for IJW120R100T1 (100mOhm) will be $24.90 per piece (1,000 pieces quantity).
More information about Infineon’s CoolSiC 1200V SiC JFET family at