15 W GaN on SiC pulsed power transistor targets radar

September 08, 2014 // By Jean-Pierre Joosting
M/A-COM Technology Solutions has announced a GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications.

The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications. The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency.

These high performance transistors are assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.

The transistors make an ideal driver stage for the company’s higher power GaN transistors for L-Band and S-Band pulsed radar applications.”

Operating between the DC-3.5 GHz frequency range, the devices are highly robust transistors with high voltage breakdowns and boast a mean time to failure (MTTF) of 600 years. The product is offered in both an enhanced flanged (Cu/W) and flangeless (Cu) ceramic package which provide excellent thermal performance.

Samples of MAGX-000035-015000 and MAGX-000035-01500S are available from stock.