1800-V IGBT features monolithic integrated diode

September 13, 2012 // By Paul Buckley
Toshiba Electronics Europe (TEE) has unveiled an IGBT with an integrated reverse recovery diode that offers an industry-leading voltage rating of 1800 V.

The GT40WR21 will be ideal for induction heating and induction cooking designs and other applications demanding high-performance voltage resonator inverter switching.

The GT40WR21 1800 V N-channel RC-IGBT (Reverse Conducting IGBT) consists of a freewheeling diode monolithically integrated into an IGBT chip. The TO247-equivalent package TO-3P (N) measures just 15.5 mm x 20.0 mm x 4.5 mm. Ultra high-speed switching is supported by a typical IGBT fall time of only 0.15 µs.

Toshiba’s new device is rated for a collector current (IC) of 40A and can handle peak currents of 80 A for 1ms. Typical saturation voltage at 40 A is only 2.9 V. Maximum collector power dissipation at 25°C is 375 W. The integrated diode is rated for a forward current of 20 A and a peak current (for 100 µs) of 80 A.

As with previous models in Toshiba’s N-channel IGBT family, the GT40WR21 can support high-temperature operation with a maximum junction temperature (Tj) of 175°C. Low turn-off switching losses ensure high-efficiency operation.

Visit Toshiba at www.toshiba-components.com