1900W LDMOS power transistor in rugged construction

October 04, 2016 // By Graham Prophet
Ampleon (Nijmegen, The Netherlands) has added the BLF189XR to its family of extremely rugged “XR” LDMOS power transistors designed specifically for use in high power amplifiers operating in the 10 – 500 MHz band.

Suiting use in a wide variety of broadcast and industrial applications, and capable of operating with a VSWR up to 65:1, the device is rated to deliver 1,700W CW or 1,900W pulsed.

 

The BLF189XR will be available in two variants. The BLF189XRB delivers 40 % more output power than the BLF188XR (1900W pulsed) and is aimed at applications working at frequencies up to 150 MHz. The second product will be the BLF189XRA, which can deliver 20 % more output power compared to the current BLF188XR (1700W pulsed), and is optimized to operate across the entire band up to 500 MHz.

 

Delivering the highest possible power and reducing the number of transistors required to build a high power output amplifier, the rugged BLF189XR provides the best possible efficiency from the smallest possible package and offers the lowest cost per Watt. Ampleon’s ‘XR’ extremely rugged Gen6HV LDMOS 50V process technology is employed to build the family.

 

In addition to FM broadcast applications, the potential uses for industrial, scientific and medical equipment include plasma generators, medical scanners and particle accelerators. Industrial RF heating, drying and thawing are other possible uses.

 

The BLF189XR is contained in an SOT539A package. An optional earless flanged SOT539B package device, the BLF189XRS, is also available.

 

Ampleon; www.ampleon.com