The nvSRAM has a silicon-oxide-nitride-oxide-silicon (SONOS) flash storage element included with each memory cell, so in the event of an unforeseeable operating voltage drop below a defined value, the robust, cost-optimized SONOS technology enables non-volatile storage of all data in less than 15ms. The non-volatile memory device also provides the typical advantages of static random access memories (SRAMs), such as fast access times and unlimited read & write endurance.
The ANV32AA1W serial nvSRAM comes with a double memory architecture organized as 128 k words of 8 bits each and supports SPI Modes 0 and 3. It runs at a clock rate of 66MHz.
An integrated Power Down functionality (hibernate mode) with a standby current of less than 1 µA ensures low power consumption of the system. The time to recover from Power Down mode is typically only 60 µs. Unique safety features, such as checksum protected memory accesses (Secure READ and Secure WRITE) as well as Time Monitoring, ensure a high degree of reliability of the nvSRAM.
The ANV32AA1W can be operated with 2.7 V to 3.6 V and comes in 8-pin DFN and 16-pin 169 mil TSSOP packages for commercial and industrial (-40 °C to +85 °C) temperature ranges.
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