1W, small-outline GaN-on-Si white LEDs in 3535 lens type package

September 12, 2014 // By Graham Prophet
Toshiba Electronics has extended its LETERAS family of white LEDs with a series of ultra-compact devices that combine cost-effective gallium nitride-on-silicon (GaN-on-Si) chips with an industrial standard 3535 lens type package.

Devices in the TL1L3 series of 1.0W LEDs sit on a footprint of 3.5 x 3.5 mm and have a height, including lens, of 2.42mm. Despite their small size the LEDs deliver typical luminous flux ratings of between 112 and 145 lumens, depending on the correlated colour temperature (CCT). Use them in tube lights, light bulbs, down lights and ceiling lights, as well as street light and floodlight designs.

The TL1L3 LED series comprises seven devices offering colour temperatures from 2700K to 6500K. Minimum colour rendering index (Ra) ratings of up to 80 contribute to natural looking lighting across all target applications. The low typical forward voltage (VF) is 2.85V (at a forward current of 350 mA).

TL1L3 LEDs are rated for operating temperatures between -40°C and 100°C and have a maximum power dissipation of 3.4W. They have a very low typical thermal resistance Rth(j-s) from LED junction to solderpoint of 5°C/W.

High-performance white LEDs have typically been fabricated on expensive sapphire substrates using relatively small 100 mm or 150 mm wafers. Toshiba LETERAS LEDs use a cost-effective gallium nitride-on-silicon (GaN-on-Si) process technology that allows GaN LEDs to be produced on 200 mm silicon wafers.

Toshiba; www.toshiba-components.com