20-V single P-channel PowerTrench MOSFETs improve portable device battery charging and load switching

August 08, 2012 // By Paul Buckley
Fairchild Semiconductor has expanded the company’s line of P-Channel PowerTrench MOSFETs To help designers of cellular handsets and other portable applications improve battery charging and load switching.

The FDMA910PZ and FDME910PZT feature the MicroFET MOSFET package and provide exceptional thermal performance for their physical size (2 x 2 mm and 1.6 x 1.6 mm), making them well suited for switching and linear mode applications. Available with a 20 V rating, the devices offer low on-state resistance. To prevent electrostatic discharge (ESD) failures, the FDMA910PZ and FDME910PZT are equipped with optimized Zener diode protection, which also reduces IGSS leakage maximum rating from 10 µA to 1 µA.

The FDMA910PZ is packaged in a low profile - 0.8 mm maximum in the  MicroFET 2 x 2 mm package with HBM ESD protection level > 2.8 kV typical.

FDME910PZT is packaged in a low profile - 0.55 mm maximum in the MicroFET 1.6 x 1.6 mm thin package with HBM ESD protection level > 2 kV typical.

The FDMA910PZ and FDME910PZT are free from halogenated compounds and antimony oxides and are RoHS-compliant. Both devices provide safe operation at low-voltage and are suitable for use in handsets and portable devices.

Availability and Pricing    

Samples of the FDMA910PZ and FDME910PZT P-Channel PowerTrench MOSFETs are available upon request.  The FDMA910PZ is priced at $0.36 in 1,000 quantity pieces.  The FDME910PZT is priced at $0.33 in 1,000 quantity pieces.

More information about FDMA910PZ and FDME910PZT P-Channel PowerTrench MOSFETs at www.fairchildsemi.com/pf/FD/FDMA910PZ.html

and www.fairchildsemi.com/pf/FD/FDME910PZT.html