25-V and 30-V N-channel power MOSFETs offer lowest Rdson in a QFN package

January 20, 2015 // By Paul Buckley
Texas Instruments has introduced 11 N-channel power MOSFETs to the company's NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry’s lowest on-resistance (Rdson) in a QFN package.

TI's 12-V FemtoFET CSD13383F4 for low-voltage battery-powered applications achieves the lowest resistance at 84-percent below competitive devices in a 0.6 mm by 1 mm package.  

The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For instance, the 25-V CSD16570Q5B supports a maximum of 0.59 milliohms of Rdson, while the 30-V CSD17570Q5B achieves a maximum of 0.69 milliohms of Rdson.

TI's CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for DC/DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot swap controller such as the TPS24720.

Availability and Pricing

Available in volume now from TI and its authorized distributors, the products range in price from $0.10 for the FemtoFET CSD13383F4 to $1.08 for the CSD17670Q5B and CSD17570Q5B, all in 1,000-unit quantities.