Claimed as the first transistors in a 1.1 x 1 x 0.37 mm low-profile DFN (discrete flat no-leads) package. The new portfolio consists of 25 types including low R DSon MOSFETs, as well as low saturation and general purpose transistors that boost current capabilities up to 3.2 A. The ultra-small form factor and high performance suit the new product families for power management and load switches in portable and space-constrained applications.
“Achieving this high value for drain and collector current in such a small plastic package is unprecedented,” said Joachim Stange, product manager, transistors, NXP Semiconductors.
The new product series is available in two package versions: the single-die DFN1010D-3 (SOT1215) package with a power dissipation capability of 1 W comes with the special feature of tin-plated, solderable side pads. These side pads meet strict automotive requirements by offering the advantage of optical soldering inspection, as well as a better quality of solder connection compared to conventional leadless packages. The dual-die package DFN1010B-6 (SOT1216) with the 1.1-mm² footprint is the smallest package available for dual transistors.
The products in DFN1010 can replace many WL-CSP devices, as well as larger DFN and standard leaded SMD packages such as SOT23 which is eight times the size, while delivering equivalent or even better performance.
Low R DSon values down to 34mOhm
I D up to 3.2 A
Voltage range of 12 V to 80 V
ESD protection of 1 kV
Single low V CEsat (BISS) transistors
Low V CEsat values down to 70 mV
Collector current (I C) up to 2 A, Peak collector current (I CM) up to 3 A
V CEO of 30 V and 60 V
Dual NPN/PNP resistor-equipped (digital) transistor (100 mA, R1=R2=47 kOhm / AEC-Q101 qualified)
NXP’s low RDSon MOSFETs: www.nxp.com/group/12065
NXP’s low VCEsat transistors: www.nxp.com/group/10921
Product information on GP transistor in DFN1010B-6: www.nxp.com/pip/BC847QAPN
Product information on RET (Digital transistor) in DFN1010B-6: