Rohm says it is now mass-producing the first trench-type SiC MOSFETs. This generation of SiC MOSFETs reduces on-resistance by 50% across the entire temperature range and input capacitance by 35% in the same chip size compared with planar gate-type SiC MOSFETs. Optimum performance is achieved by combining exceedingly low loss with high-speed switching performance. This also makes it possible to reduce the size of peripheral components such as coils and capacitors by increasing switching frequency. As a result, conversion efficiency is improved, contributing to miniaturisation, weight reduction, and greater energy efficiencies. The new SCT3080KL 1200V SiC MOSFET series in a TO-247 package is an example. 650V FETs in that package are available with 120 m Ω down to 17 m Ω on-resistance; at 1200V the range spans 160 to 22 mΩ. Rohm will also offer an AECQ qualified SiC MOSFET based on its 2nd Gen planar series.
The 3rd Gen of SiC Schottky Barrier Diodes (SBD) realise lowest forward voltage (VF) and lowest reverse leakage current (lR) over the entire temperature range among all of the SiC SBDs currently available, Rohm claims. In addition to this, they feature high surge current capability which is ideal for power supply applications. Adding to the recently announced TO220AC devices at 650V/6, 8 and 10A, Rohm has introduced D2PAK and TO220FM devices also adding lower current options, 2A and 4A to the family. SiC diodes exhibit ultra-short reverse recovery time compared with silicon-based devices which basically makes them ideal for high speed switching.
Full SiC modules include chopper type modules for converters and integrate both trench SiC MOSFETs and SiC SBDs. In addition to 2 in 1 type modules, 1200V/120A,180A and 300A Chopper type modules are being prepared. In addition to this, Rohm says it is working on a new power module which will exhibit lower stray inductance.
Rohm Semiconductor; www.rohm.com/eu