40 GHz Schottky barrier diodes with low junction capacitances

December 01, 2016 // By Graham Prophet
Microwave component supplier SemiGen, Inc. (Manchester, New Hampshire, USA) has added a series of Schottky Diodes for use up to 40 GHz and for low, medium, and high barrier applications

These silicon-based Schottky diodes utilize various metal schemes to provide performance for low, medium and high barrier applications up to 40 GHz. This series of diodes feature small junction capacitances, low I/F noise, low resistance, and multi-junction chips for optimum performance. With forward voltage drops as high at 0.6V and superior TSS, these diodes are suitable for detector/mixer applications with frequency ranges from the S-band up to the Ka-band as well as modulators, low power limiters and high speed switches. With 48 different variants, these SBDs come in chip, glass, ceramic, and beam lead packages.

 

SemiGen’s barrier bridge quads and ring quads offer breakdown voltages as high as 5V, capacitances ranging from 0.15 pF to 0.35 pF, and a series resistance ranging from 14 to 20 Ω. These bridge quads and ring quads have a stable matched electrical performance and are of a monolithic construction with operating temperatures ranging from -55C to 150C, for use in designs of doublers, modulators, and double balanced mixers up to 40 GHz.

 

SemiGen; www.semigen.net