40-V MOSFETs see further reductions in on-resistance and output charge

May 21, 2014 // By Graham Prophet
Toshiba Electronics' latest family of low-voltage, ultra-efficiency Trench-MOSFETs is based on the company’s U-MOS IX-H process and further improves the on-resistance-to-output-charge-product figure of merit for this class of devices.

Initially available in 40V versions, the family will be extended in the coming months with devices offering ratings of 30V to 60V. The first device in the series has a typical R DS(ON) of 0.7 mΩ (max 0.85 mΩ) and a typical output capacitance (Coss) of 1930 pF. Rated for 40V, the TPHR8504PL is supplied in an SOP-Advance package measuring 5 x 6 mm.

Target applications for the ninth generation U-MOS family include DC-DC converters, synchronous rectification and other power management circuitry where low-power operation, high-speed switching and minimum PCB real estate are needed. U-MOS IX-H MOSFETs are suitable for high-side and low-side switching in DC-DC converters and secondary side synchronous rectification in AC-DC conversion circuitry.

Designers will be able to choose from a variety of surface mount packages and, in future, also an option that offers dual-side cooling.

Toshiba; www.toshiba-components.com