400/500V power FETs carry automotive qualification

December 16, 2015 // By Graham Prophet
STMicroelectronics has introduced a family of high-voltage N-channel power MOSFETs for automotive applications. These AEC-Q101-qualified devices are built using ST’s MDmesh DM2 super-junction technology with fast-recovery diode. The devices feature a breakdown voltage over the 400V-650V range and are housed in D2PAK, TO-220, and TO-247 packages.

The 400V and 500V devices are positioned as the industry's first AEC-Q101-qualified devices at these breakdown voltages, while the 600V and 650V devices offer higher performance than alternative products. All of these devices are tailored for automotive applications that require an integrated fast body diode, softer commutation behaviour, and back-to-back gate-source Zener protection. They are suitable for full-bridge zero-voltage-switching topologies.

The FETs optimise performance in both Trr / Qrr and softness factor in the automotive market, and are also claimed as among the best in turn-off energy (Eoff) at high currents, improving efficiency of automotive power supplies. Fast body-diode performance reduces EMI issues, allowing the use of smaller passive-filtering components. MDmesh DM2 technology enables “greener” power design by reducing wasted energy, maximising the efficiency, and minimising the form factor of the end products.

Features include: fast-recovery body diode; extremely low gate charge and input capacitance of 44 nC and 1850 pF, respectively, for a 500V device in D2PAK; low on-resistance; best reverse recovery time (Trr): 120 nsec @ 28A for a 600V device in TO-247 and 135 nsec @ 48A for a 650V device in TO-247; gate to source Zener-protected

Prices range from $3.00 to $10.00 (1000), depending on breakdown voltage and package type.

ST; www.st.com/mdmeshdm2