40V MOSFETs rated at up to 100A, with lowest losses

October 03, 2016 // By Graham Prophet
Low-voltage devices in TO220 and TO220SIS packages promise ‘best-in-class’ efficiency across a range of load conditions; Toshiba has added two N-channel devices to its U-MOS IX-H family of high-efficiency, high-speed switching MOSFETs.

The TK3R1E04PL (TO-220 package) and TK3R1A04PL (TO-220SIS package) have a maximum V DSS rating of 40V and can operate with gate-source voltages (V GSS) of ±20V. Respective maximum DC drain currents are 100A and 82A. Both devices have a typical on resistance of 2.5 mΩ (@V GS=10V) and a typical output capacitance (C OSS) of 1000 pF. These characteristics ensure efficient on-state operation, rapid switching, and lower switching losses. Low output charge suits the FETs to use in synchronous rectification designs. The new MOSFETs will operate with channel temperatures up to 175ºC, with the U-MOS IX-H technology ensuring stable operation over a wide range of temperatures and load conditions.

 

Toshiba Electronics Europe; www.toshiba.semicon-storage.com