600-V GaN FET, integrated power conversion stage, from TI

April 26, 2016 // By Graham Prophet
Texas Instruments is samplinga 600-V gallium nitride (GaN) 70-mΩ field-effect transistor (FET) power-stage; TI claims to be the only semiconductor manufacturer to publicly offer a high-voltage driver-integrated GaN solution.

The 12-A LMG3410 power stage is intended for use with TI’s analogue and digital power-conversion controllers to create smaller, more efficient and higher-performing designs compared to silicon FET-based solutions, especially in isolated high-voltage industrial, telecom, enterprise computing and renewable energy applications


“With over 3 million hours of reliability testing, the LMG3410 gives power designers the confidence to realize the potential of GaN and to rethink their power architecture and systems in ways not feasible before,” said Steve Lambouses, TI vice president of high-voltage power solutions.


With its integrated driver and features such as zero reverse-recovery current, the LMG3410 provides reliable performance, especially in hard-switching applications where it can dramatically reduce switching losses by as much as 80%. TI claims a higher level of ease-of-use compared to stand-alone GaN FETs; the part integrates built-in intelligence for temperature, current and undervoltage lockout (UVLO) fault protection. It is the first IC to include GaN FETs manufactured by TI; the company creates its GaN devices in a silicon-compatible factory and qualifies them with practices that are beyond the typical Joint Electron Device Engineering Council (JEDEC) standards to ensure the reliability and robustness of GaN for demanding use cases. Easy-to-use packaging will help increase the adoption of GaN power designs in applications such as power factor controller (PFC) AC/DC converters, high-voltage DC bus converters and photovoltaic (PV) inverters.


- The 600-V power stage delivers 50% lower power losses in a totem-pole PFC compared with state-of-the-art silicon-based boost power-factor converters. The reduced bill of materials (BOM) count and higher efficiency enable a reduction in power-supply size of as much as 50%.

- Reduced packaging parasitic inductance; an 8 x 8-mm quad flat no-lead (QFN) package decreases power loss, component voltage stress and electromagnetic interference (EMI) compared to discrete GaN solutions.

- GaN’s zero reverse-recovery charge benefits new switching topologies, including totem-pole PFC and LLC topologies to increase power density and efficiency.