600-W GaN on SiC pulsed power transistor delivers lowest pulse droop

September 17, 2013 // By Paul Buckley
M/A-COM Technology Solutions Inc. has unveiled a new ceramic GaN on SiC HEMT power transistor for avionics applications.

The MAGX-001090-600L00 is a gold-metalized, matched GaN on Silicon Carbide, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems. The MAGX-001090-600L00 provides 600 W of output power with a typical 21.4 dB of gain and 63% efficiency. The device has low thermal resistance of 0.05 0°C/W and best-in-class load mismatch tolerance of 5:1. In addition, the device has the lowest pulse droop of 0.2 dB and also can be used effectively under more demanding Mode-S ELM operating conditions.

MACOM’s GaN transistor technology has been fully qualified with accelerated, high-temperature lifetime tests and this device has a predicted MTTF of more than 600 years at a maximum junction temperature of 200°C. The device also boasts high breakdown voltages, which provides customers with reliable and stable operation even in extreme load mismatch conditions.

Evaluation boards of MAGX-001090-600L00 are available from stock.

Visit MACOM at www.macomtech.com