600V super junction MOSFETs have integrated high-speed diodes

May 16, 2013 // By Graham Prophet
Toshiba Electronics Europe (TEE) has introduced 4th generation, low-on-resistance DTMOS IV devices with reduced recovery times improve efficiency and reduce size of switching power supplies.

The family of 600V MOSFETs with integrated high-speed intrinsic diodes, TK16A60W5, TK31J60W5 and TK39J60W5, achieve significant improvements in power efficiency by combining the RDS(ON)*A (ON-resistance area) characteristics with reverse recovery times. In addition, the use of a single epitaxial process ensures only small increases in ON resistance and recovery times at high temperatures.

The TK16A60W5 is supplied in a TO-220SIS package. Maximum current rating (ID) is 15.8A and RDS(ON) is 0.23Ω. The diode shows an excellent typical reverse recovery time (trr) of 100 nsec. In comparison, the standard version shows a trr of 280 nsec. Both the TK31J60W5 and TK39J60W5 are supplied in a TO-3P(N) package and have maximum currents of 30.8A and 38.8A respectively. Maximum respective RDS(ON) ratings (VGS = 10V) are 0.099Ω and 0.074Ω . Typical trr diode characteristics are 135 nsec and 150 nsec. Variants in TO-247 packaging are scheduled to be available by autumn 2013.

Super junction MOSFETs offer ultra-low ON resistance without power loss penalties. Using Toshiba's single epitaxial process, the fourth generation super junction 600V DTMOS IV MOSFET series provides a 30% reduction in RDS(ON)•A - a figure of merit (FOM) for MOSFETs - compared to its predecessor, DTMOS III.  A reduction in RDS(ON)•A, makes it possible to house lower resistance chips in the same packages, helping to improve the efficiency and reduce the size of power supplies.

Toshiba, www.toshiba-components.com