650V, 100A GaN transistors on show

September 04, 2015 // By Graham Prophet
GaN Systems (Ottawa, Canada) is to display its GS66540C 650V 100A high current GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 - ECCE Europe (CERN, Geneva, September 8th – 10th )

The GS66540C (the picture is of a prior, lower-current part) high current power devices will be revealed for the first time. Part of the company’s family of 650V gallium nitride power transistors based on its proprietary Island Technology, these high density devices achieve extremely efficient power conversion with fast switching rates of >100V/nsec and ultra-low thermal losses. The GS66540C is supplied in an evolved form of GaNPX packaging specially developed for higher operating currents, providing lower inductance and greater surface mount mechanical robustness required by power modules for the industrial and automotive markets.

The near-chipscale parts have no wirebonds and offer step-change improvements in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Parts are, the company says, being designed in to solar, industrial and automotive applications as global manufacturers race to use the power of GaN to secure competitive advantage.

GaN Systems positions itself as the first company to have developed and productised a comprehensive portfolio of GaN E-HEMT power devices with current ratings from 7A to 250A, in both 650V and 100V ranges. GaN Systems’ Island Technology die design, combined with the extremely low inductance and thermal efficiency of GaNPX packaging and Drive Assist technology, provides its GaN E-HEMTs with a claimed 45x improvement in switching and conduction performance over silicon MOSFETs and IGBTs.

GaN Systems; www.gansystems.com