650V, 25A silicon carbide power MOSFETs operate to Tj of 225C

June 23, 2016 // By Graham Prophet
Intended to enable faster switching in high temperature power conversion topologies and systems, TT Electronics, under its acquired Semelab brand, has introduced a silicon carbide (SiC) power MOSFET with a maximum operating junction temperature of +225°C.

Applications include distribution control systems with greater environmental challenges, such as those in close proximity to a combustion engine. Supplied in a high power dissipation, low thermal resistance, fully hermetic, ceramic surface-mount SMD1 package the 25A, 650V rated (60A pulsed current rating) SML25SCM650N2B also ensures faster switching and low switching losses in comparison to silicon MOSFETs, consequently the size of the passive components in the circuit can be reduced resulting in weight and space saving benefits. The N-channel MOSFET features a total power dissipation of 90W at a TJ temperature of 25 degrees. A range of screening options are available.

 

For use in applications that require faster switching in high temperature power conversion topologies and systems, applications areas for the SML25SCM650N2B include oil drilling, distributed management control systems, renewable energy applications / power conversion, space systems and applications.

 

TT Electronics plc; www.ttelectronics.com