650V, dual silicon carbide diodes reduce EMI

January 14, 2014 // By Graham Prophet
Dual-configuration Schottky silicon-carbide (SiC) diodes are, makers ST say, the first such devices with a voltage rating of 650V per diode in a choice of common-cathode or series configurations allowing use in interleaved or bridgeless power-factor correction (PFC) circuits.

These SiC power semiconductors have inherently higher energy efficiency and ruggedness compared to silicon alternatives. ST’s STPSC6/8/10TH13TI and STPSC8/12/16/20H065C devices, with maximum average-current ratings of 6A, 8A, 10A, or 8A, 12A, 16A, 20A, respectively combine SiC performance advantages with the space savings and EMI reduction resulting from dual integration of the diodes. They are suitable for interleaved or bridgeless PFC topologies that improve energy efficiency of equipment such as server and telecom power supplies, solar inverters, or electric-vehicle charging stations.

The diodes eliminate energy losses due to reverse recovery at turn-off, assisting switching efficiency, and the 650V voltage rating provides increased safety margin against hazardous reverse-voltage spikes. Ceramic isolation built into the package of the STPSCxxTH13TI devices simplifies attachment to an external heatsink, allowing the removal of the usual external isolation.

STPSC6TH13TI through STPSC10TH13TI (series configuration in insulated TO-220AB package) and STPSC8H065C through STPSC20H065C (common-cathode in standard TO-220AB) cost from $4.24 (1000). The STPSC20H065C is also available in TO-247.

STMicroelectronics; www.st.com/sicdiodes