650V IGBTs reach “near-perfect” turn-off efficiency

March 28, 2014 // By Graham Prophet
ST’s HB series of Insulated-Gate Bipolar Transistors (IGBTs) claim up to 40% lower turn-off energy losses than competing high-frequency devices, while reducing conduction losses by up to 30%; they offer extended rating for extra design margin

Using ST’s advanced Trench-Gate Field-Stop High-Speed technology, the HB series has a minimal collector-current turn-off tail as well as very low saturation voltage (Vce(sat)) down to 1.6V (typical), hence minimising energy losses during switching and when turned on. In addition, the technology is well controlled, producing a tight distribution window of parameters, enhancing repeatability and simplifying system design.

ST’s HB series IGBTs enhance the energy efficiency of solar inverters, induction heaters, welders, uninterruptible power supplies, power-factor correction, and other high-frequency power converters. The extended voltage rating of 650V ensures at least 600V breakdown voltage in ambient temperatures down to -40°C, making the devices ideal for solar inverters marketed in colder climates. The maximum operating junction temperature of 175°C and wide Safe Operating Area (SOA) increase reliability and allow smaller heatsinks.

Options include maximum current ratings from 30A to 80A (at 100°C), a selection of popular power packages, and co-packed diode optimised for resonant or hard-switching circuits. Pricing is from $2.14 for the STGW30H65FB (1,000).

ST Microelectronics www.st.com/igbt