650V reverse-conducting IGBT cuts losses by 30%

May 16, 2014 // By Graham Prophet
Infineon Technologies has extended the latest generation of reverse conducting IGBTs (Insulated Gate Bipolar Transistors) for resonant applications with a new 650V component including a monolithically integrated RC diode.

The high performance RC-H5 family of products can now be used in a significantly broader range of applications: the new discrete RC-H5 650V power semiconductor is suited for use in multi-hob induction stoves and inverterised microwave ovens, as well as for all partial hard-switching half-bridge topologies.

Switching losses have been reduced by a further 30% over prior RC-H5 parts. This allows designers to work with switching frequencies of up to 40 kHz. Altogether the new designed discrete power semiconductor is characterised by better energy efficiency leading to a 5% saving in energy consumption of the whole system.

Systems operating on the basis of the RC-H5 650V also have significantly improved reliability due to the increased blocking voltage which gives more design margin. The ability of the 650V component to provide soft or hard switching as required not only means greater flexibility of use but also that less strain is put on the system as a whole. The improved EMI behaviour of the new component is also a significant benefit in fast and soft switching systems where less filtering is then required. In addition, optimised thermal performance enables trouble-free operation in ambient temperatures of up to 175°C.

“Induction cooking holds enormous potential for energy saving in household appliances and for environmental benefits,” says Roland Stele, Marketing Director IGBT Power Discretes at Infineon Technologies. The new RC-H5 component is available in 20A, 40A and 50A current classes.

Infineon; www.infineon.com/rch5