700W L-band transistor claims highest output power

March 24, 2014 // By Graham Prophet
Infineon’s 700W L-Band RF power transistor offers the highest-in-industry L-Band output power available for radar systems operating in the 1200 – 1400 MHz frequency range. By lowering part counts, the new device can reduce system cost and improve reliability while maintaining high ruggedness.

Infineon’s power transistor, PTVA127002EV, is suited for L-Band radar systems used in air traffic control and weather observation applications. High efficiency corresponds with low heat output, and high ruggedness (ability to withstand 10:1 VSWR load mismatch) further contributes to the advantages of low component count made possible by the 700W output.

Based on the company’s 50V LDMOS power transistor technology, the PTVA127002EV exhibits excellent efficiency; typically 55% across the 1200-1400 MHz band, with a P1dB output power of 700W, 16 dB gain and low thermal resistance characteristics when measured with a 300 µsec 10% duty cycle pulse.

With the new addition, Infineon now offers a family of RF power transistors for 1200 – 1400 MHz system applications with rated power output of 25W, 50W, 350W and 700W. In addition to ruggedness, common specifications for each device include wide gate source voltage range (-6V to 12V), and integrated electrostatic discharge (ESD) protection.

Infineon; www.infineon.com/rfpower