Microsemi has expanded its family of RF power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology with a new 750 W RF transistor.
The MDSGN-750ELMV transistor delivers 750 W peak power with 17 dB of power gain and typical 70% drain efficiency when operating at 1030/1090 MHz to provide the most power in one single-ended device of its type covering this band.
In addition, the new RF device is capable of handling the demanding commercial Mode-S ELM (Extended Length Message) pulsing conditions for both the 1030 MHz ground based interrogators and 1090 MHz airborne transponders.
Features include an ELM pulsing format - burst of quantity of 48 pulses: 32 µs (ON) and 18 µs (OFF), burst repetition period of 24 ms, and long term duty cycle of 6.4.
Further the device has a drain bias of +50 V (Vdd), a breakdown voltage of >200 V (Bvdss), low thermal resistance of 0.24 C/W and power output temperature stability of -40°C to +85°C (< ±0.7 dB).
GaN on SIC HEMT provides several advantages over alternative process technologies including higher power performance, bill-of-material cost savings, and a reduced device-size footprint. For example, the MDSGN-750ELMV offers the following benefits:
• Single-ended design with simplified impedance matching, replacing lower power devices that require additional levels of combining;
• Highest peak power and power gain for reduced system power stages and final stage combining;
• Single output stage pair provides 1.5 kW peak output power with margin;
• Combining four output stage pairs delivers a full system >5 kW peak output power;
• 50 V bias allows use of existing power supply rail with reduced DC current demand;
• Extremely rugged performance improves system yields;
• Amplifier size is 50% smaller than devices built with silicon bipolar junction transistors (Si BJT) or laterally diffused metal oxide semiconductor (LDMOS) devices;
• Greatly more breakdown voltage headroom than