The LMG5200 GaN FET power stage will help first design-ins of next-generation GaN power-conversion solutions, providing increased power density and efficiency in space-constrained, high-frequency industrial and telecom applications, TI says. “One of the biggest barriers to GaN-based power design has been the uncertainties around driving GaN FETs and the resulting parasitics due to packaging and design layout,” according to Steve Lambouses, vice president of TI’s High-Voltage Power Solutions business. “We help power designers realise the full power potential of GaN technology by offering them a complete, reliable power-conversion ecosystem of optimised integrated modules, drivers and high-frequency controllers in advanced, easy-to-design packaging.”
Typically, designers who use GaN FETs that switch at high frequencies must be careful with board layout to avoid ringing and electromagnetic interference (EMI). TI says its LMG5200 dual 80-V power stage prototype significantly ease this issue while increasing power-stage efficiency by reducing packaging parasitic inductances in the critical gate-drive loop. The LMG5200 features advanced multichip packaging technology and is optimised to support power-conversion topologies with frequencies up to 5 MHz.
The easy-to-use 6 x 8-mm QFN package requires no underfill, which simplifies manufacturing. The reduced footprint solidifies the value of GaN technology and will help increase adoption of GaN power designs in many new applications, ranging from new high-frequency wireless charging applications to 48-V telecom and industrial designs.
The LMG5200 is priced at $50 each with a maximum purchase of 10 units. The LMG5200 EVM is available for $299.
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