800V DTMOS-IV super-junction MOSFET

November 05, 2014 // By Graham Prophet
Toshiba Electronics Europe has the first 800V power MOSFET based on its high voltage DTMOS IV super junction technology. The TK17A80W uses Toshiba's single epitaxial process and is suited to equipment that requires high reliability, power efficiency and a compact design. Applications will include power supplies and adapters, fly back converters and LED lighting equipment.

Compared to multi epitaxial processes, Toshiba says, its Deep Trench technology delivers lower ON-resistance (RDS(ON)) at higher temperatures. It also offers reduced turn-off switching losses (EOSS) than previous technology generations. The combination of reduced increase in RDS(ON) at high temperatures and reduced EOSS provides higher efficiency for power supplies and assists designers in minimising system size.

DTMOS IV enables faster switching performance by reducing parasitic capacitance between gate and drain. Typical CISS for TK17A80W is 1450 pF (@VDS=300V, f=100 kHz). Maximum ratings are 800VDSS , ±30VGSS and 17A drain current. Maximum RDS(ON) is 0.3 Ohm.

The TK17A80W comes in a fully isolated TO-220SIS package; further performance options and TO-220, DPAK and IPAK packages will follow.

Toshiba; www.toshiba-components.com