Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. This input-matched GaN transistor is packaged in an air cavity ceramic package for excellent thermal stability through the use of advanced heat sink and power dissipation technologies.
Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
Key features include 9-W output power, 225 MHz to 1215 MHz instantaneous bandwidth, 28-V operation, output power of 39.5 dBm, gain of 16 dB, and power added efficiency of 60%.
The power amplifiers feature inputs internally matched to 50 Ω and operate over -40 °C to 85 °C. Large signal models are available.`
Typical applications include Class AB operation for public mobile radio, power amplifier stages for commercial wireless infrastructure, general purpose Tx amplification, test instrumentation, civilian and military radar.