Advanced SiC power devices to accelerate automotive electrification

May 17, 2016 // By Graham Prophet
STMicroelectronics has announced advanced high-efficiency power semiconductors for Hybrid and Electric Vehicles (HEVs/EVs) with a timetable for qualification to the automotive quality standard AEC-Q101. A complete set of devices allows full conversion of auto power modules to silicon carbide (SiC) for greater vehicle range, convenience, and reliability.

ST says it is bringing to the silicon carbide market an advanced 6-inch wafer capability and process that will amount to a superior SiC offering to carmakers and automotive suppliers. Its AEC-Q101 qualification program is scheduled to complete in early 2017. The company is presenting a portfolio of new-generation rectifiers and MOSFETs for high-voltage power modules and discrete solutions addressing all the vehicle’s main electrical blocks. These include the traction inverter, on-board battery charger, and auxiliary DC-DC converter.


“Major carmakers and automotive Tier-1s are now committing to silicon-carbide technology for future product development to leverage its higher aggregate efficiency compared to standard silicon in a wide range of operating scenarios,” said Mario Aleo, Group Vice President and General Manager, Power Transistor Division, STMicroelectronics. ST offered its first 1200V SiC MOSFET in 2014, achieving industry-leading 200°C rating for more efficient and simplified designs.


ST is currently fabricating SiC MOSFETs and diodes on 4-inch (100 mm) wafers. In order to drive down the manufacturing costs, improve the quality, and deliver the large volumes demanded by the auto industry, ST is scaling up its production of SiC MOSFETs and diodes to 6-inch (150 mm) wafers, and is on schedule to complete both conversions by the end of 2016. ST has already qualified its 650V SiC diodes to AEC-Q101, and will complete qualification of the latest 650V SiC MOSFETs and 1200V SiC diodes in early 2017. The qualification of the new-generation 1200V SiC MOSFETs will be completed by the end of 2017.


The STPSC20065WY 650V SiC diode is in full production now in DO-247. The range also includes lower current ratings and smaller form-factor TO-220 package options. The STPSC10H12D 1200V SiC diode is sampling now to lead customers in the TO-220AC package and goes to production this month, with volume production of the automotive-grade version planned for Q4 2016. Multiple current ratings from 6A to 20A and packaging options will also be available.


The SCTW100N65G2AG 650V SiC MOSFET is sampling now to lead customers in the HiP247 package. It will ramp up in volumes in H1 2017. To enable more compact designs, a 650V SiC MOSFET in the surface-mount H2PAK will also be qualified to AEC-Q101 in H1 2017.




next page; additional notes on ST’s SiC