Automotive protected high-side N-channel power MOSFET gate driver

February 17, 2016 // By Graham Prophet
Toshiba adds a high-side N-channel Power MOSFET gate driver that can be controlled by 3.3V-logic input. It has short-circuit protection/diagnosis functions and a feature to prevent reverse current flow to itself in the event of reverse battery connection.

TPD7104AF is designed for automotive applications, such as power connect/disconnect switches in start/stop systems, semiconductor relays in ECUs (Electronic Control Units) and junction boxes in 12V battery system. By combining a TPD7104AF gate driver and an N-channel power MOSFET, a semiconductor relay can be created thanks to its built-in charge pump. By adding a shunt resistor, short-circuit protection and diagnosis functions can also be utilised. It features a very low output leak current for reverse battery condition: I REV = -1 µA (min) (@ Tj=25°C). Housed in a compact PS-8 package the device measures 2.8 x 2.9 mm.

Toshiba Electronics Europe; www.toshiba.semicon-storage.com