Fully AEC-Q101 qualified, the NXP LFPAK56D range offers best-in-class performance and reliability, while delivering a 77 percent smaller footprint than the equivalent DPAK solution which typically requires two devices. The LFPAK56D range is in volume production and is available immediately.
LFPAK56D combines two fully isolated MOSFETs into a single package designed to meet the rigorous requirements of the automotive industry. With the industry’s widest range of RDSon values across five voltage grades, it provides the best performance, current handling and reliability on the market. The new range of dual Power-SO8 MOSFETs offers customers complete flexibility and freedom to pick the device that best matches the application and module requirements, while also achieving a much higher power density.
Designing with LFPAK56D lowers costs through simpler PCB assembly, ease of inspection and shrinking module size. Smaller modules also means a significant saving in weight, which is particularly attractive to manufacturers focused on reducing CO2 emissions.
Building on NXP’s expertise in LFPAK56, which was the first power-SO8 package on the market fully qualified to AEC-Q101, NXP is now introducing the same reliable ‘copper clip’ bonding technology to dual Power-SO8 MOSFETs in LFPAK56D. This copper clip technology is what gives the package its advantage in low package resistance, inductance and high maximum ID rating.
More information about the LFPAK56D power MOSFET at